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Combination of JFET...
Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation
- Article/chapterEnglish2003
Publisher, publication year, extent ...
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Institution of Engineering and Technology (IET),2003
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-22636
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-22636URI
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https://doi.org/10.1049/el:20030606DOI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20100525
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A novel combination of junction-gated and metal-oxide-semiconductor field effect transistor (JMOSFET) has been fabricated and characterised in 4H-SiC. The high-temperature stable operation of JMOSFETs has been explored in terms of constant current levels. The JMOSFETs have shown the feasibility for operating with constant on and off current levels from room temperature up to 300degreesC. Another advantage of this device is the improved current density by accumulation of the MOS n-channel.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
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Zetterling, Carl-MikaelKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u15o61ns
(author)
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Lee, H. S.
(author)
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Östling, MikaelKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1u0kle4
(author)
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KTHMikroelektronik och informationsteknik, IMIT
(creator_code:org_t)
Related titles
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In:Electronics Letters: Institution of Engineering and Technology (IET)39:12, s. 933-9350013-51941350-911X
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