Time-resolved analysis of the white photoluminescence from SiO2 films after Si and C coimplantation

QC 20100525 QC 20111031
The analysis of the white photoluminescence (PL) from Si+ and C+ coimplanted SiO2 is reported as a function of the implanted dose. By both steady and time-resolved measurements, the presence of several components in the emission between 2 and 3.3 eV has been resolved. The decays of the PL transients are characterized by short lifetimes, below 2 ns. For the emission at 2.1-2.3 eV, photoluminescence decay transients have been measured, obtaining a fast relaxation component of about 50-70 ps, followed by a slower component of the order of 1 ns. These values contrast with the very slow behavior, characteristic for the light emission from Si nanocrystals, and make carbon-related emitting centers interesting for optoelectronic applications where fast switching behavior is important.

Perez-Rodriguez, A. (author)
Garrido, B. (author)
Gonzalez-Varona, O. (author)
Morante, J. R. (author)
Marcinkevicius, SauliusKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u16tz6ld (author)
Galeckas, AugustinasKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1718v0n (author)
Linnros, JanKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1t79mee (author)
KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

By the author/editor: Pellegrino, P.; Perez-Rodriguez, ...; Garrido, B.; Gonzalez-Varona, ...; Morante, J. R.; Marcinkevicius, ...; show more...; Galeckas, August ...; Linnros, Jan; show less...

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