WFRF:(Kortegaard Nielsen Hanne)
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- Kortegaard Nielsen, HanneKTH,Mikroelektronik och informationsteknik, IMIT (author)
Annealing study of a bistable defect in proton-implanted n-type 4H-SiC
- Article/chapterEnglish2003
Publisher, publication year, extent ...
- Elsevier BV,2003
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-23105
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-23105URI
- https://doi.org/10.1016/j.physb.2003.09.151DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- QC 20100525
- The thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5 MeV protons to a dose of 1 X 10(12) cm(-2). One configuration of the bistable defect leads to two levels in the band gap, 0.42 eV (M-1) and 0.7-0.8 eV (M-3) below the conduction band edge (E-C), and another leads to one level (M-2) at E-C-0.7 eV. The defect can be switched back and forth between the two configurations by varying the applied bias and the sample temperature. Isochronal and isothermal annealing shows that the defect anneals out between 310 degrees C and 370 degrees C with a first-order kinetics process. The origin of the defect is not known but it is implantation-induced and a low-order complex.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- 4H-SiC
- DLTS
- bistable
- ion implantation
- 4h silicon-carbide
- chemical-vapor-deposition
- epitaxial layers
- centers
- Electronics
- Elektronik
Added entries (persons, corporate bodies, meetings, titles ...)
- Martin, D. M.KTH,Mikroelektronik och informationsteknik, IMIT (author)
- Leveque, PatrickKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1cmmh3h (author)
- Hallén, Anders.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u11ywmz1 (author)
- Svensson, Bengt G.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1ntxig3 (author)
- KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)
Related titles
- In:Physica. B, Condensed matter: Elsevier BV340, s. 743-7470921-45261873-2135
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