Bistable defect in mega-electron-volt proton implanted 4H silicon carbide

QC 20100525 QC 20111027
Epitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1x10(12) cm(-2) creates an estimated initial concentration of intrinsic point defects of about 10(14) cm(-3) of which about 10% remain after the implantation and gives rise to deep states in the upper part of the band gap. Here, we investigate the samples prior to high-temperature annealing and a very complex spectrum is revealed. In particular, a bistable defect M is discovered having two DLTS peaks, M-1 and M-3 at E-C-0.42 and around E-C-0.75 eV, respectively, in one configuration and one peak, M-2 at E-C-0.70 eV in the other configuration. The charge dependent thermal activation energies for the transformation between the bistable defect peaks are 0.90 and 1.40 eV.

Kortegaard Nielsen, HanneKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1mopn1t (författare)
Leveque, Patrick (författare)
Hallén, Anders.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u11ywmz1 (författare)
Alfieri, G.Department of Physics, University of Oslo (författare)
Svensson, B. G.Department of Physics, University of Oslo (författare)
KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

Ingår i:Applied Physics Letters: AIP Publishing84:10, s. 1704-17060003-69511077-3118

Av författaren/redakt...: Martin, David M.; Kortegaard Niels ...; Leveque, Patrick; Hallén, Anders.; Alfieri, G.; Svensson, B. G.

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