As- or P-doped Si layers grown by RPCVD for emitter application in SiGeCHBTs

• A new module for the emitter formation in a bipolar transistor is presented. Arsenic- or phosphorus-doped polycrystalline silicon layer for the emitter formation is deposited in a reduced pressure chemical vapor deposition reactor using silane as the silicon source gas. Characteristics such as the carrier concentration, conductivity, surface morphology, and thermal stability of the polycrystalline-silicon layer as well as the influence this layer has on a SiGeC transistor structure during the drive-in step area studied. The active carrier concentration of the as-grown sample is strongly dependent on the deposition temperature, especially arsenic doped layers which exhibit more than one order of magnitude difference. However, the carrier concentration for the As- or P-doped layer were comparable to that of a standard in-situ doped poly-crystalline layer after a dopant activation at 925 degrees C for 10s.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

chemical-vapor-deposition

Publikations- och innehållstyp

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