Bias dependence of parallel spin torque in all-perpendicular magnetic tunnel junction nanodevices

• We performed spin-torque ferromagnetic resonance measurements on spin-torque oscillators based on CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs), with both free and fixed layers having perpendicular magnetic anisotropy, under the application of an in-plane field. A dc current between near-zero and -250 $\mu{A}$ was introduced to investigate the influence of spin-transfer torque effects on the asymmetric and symmetric components of the output voltage. Both components showed a minimum at a misalignment of about 30$^\circ$ between the magnetization of the two CoFeB layers, indicating a strong electric-field effect. We also found that the bias dependence of the spin-torque terms is in contrast to that of in-plane anisotropy CoFeB MTJs.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

PMA

ST-FMR

parallel spin torque

perpendicular spin torque

anisotropy field

electric-field effect

Materials Science and Engineering

Teknisk materialvetenskap

Physics

Fysik

Publikations- och innehållstyp

pop (ämneskategori)

ovr (ämneskategori)