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Morphological insta...
Morphological instability of NiSi1-uGeu on single-crystal and polycrystalline Si1-xGex
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- Seger, Johan (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Jarmar, T. (författare)
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- Zhang, Zhibin (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Radamson, Henry H. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Ericson, Fredric (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Smith, Ulf (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Zhang, Shi-Li (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- AIP Publishing, 2004
- 2004
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 96:4, s. 1919-1928
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The morphological stability of NiSi1-uGeu ternary alloy films formed by reacting Ni with single-crystal (sc) and polycrystalline (poly) Si1-xGeu is studied (u can be different from x). The agglomeration of NiSi1-uGeu films on Si0.7Ge0.3 occurs at 550degreesC after rapid thermal processing for 30 s, independently of the crystallinity of the Si1-xGeu. This behavior distinctly different from NiSi: NiSi films on poly-Si display a poorer morphological stability and degrade at lower temperatures than NiSi on sc-Si. On strained Si1-xGex, the presence of Ge simultaneously gives rise to two effects of different origin: mechanical and thermodynamic. The main driving forces behind the agglomeration of NiSi1-uGeu on sc-Si1-xGex are found to be the stored strain energy in the Si1-xGex and the larger (absolute) free energy of formation of NiSi compared to NiGe. The latter constitutes the principal driving force behind the agglomeration of NiSi1-uGeu on poly-Si1-xGex and is not affected by the degree of crystallinity of Si1-xGex. The total free-energy change also includes terms corresponding to the entropy of mixing of Si and Ge in both Si1-xGex and NiSi1-uGeu. Calculations show that the strain energy and the total free-energy change can be 5-7 times (with 30 at.% Ge) the surface/interface and grain-boundary energies in a NiSi film or the grain-boundary energy in an underlying poly-Si. These latter energies are responsible for the agglomeration of NiSi on sc- and poly-Si. The agglomeration takes place primarily via the interdiffusion of Si and Ge between Si1-xGex and NiSi1-uGeu. A structure likely to improve the stability of NiSi1-uGeu/Si1-xGex is discussed.
Ämnesord
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
Nyckelord
- thin-films
- phase-stability
- sixge1-x films
- strain-energy
- nickel
- sige
- nisi
- germanosilicide
- metallization
- interlayer
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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