Conductivity modulated and implantation-free 4H-SiC ultra-high-voltage PiN Diodes

• Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2 are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

4H-SiC PiN diode

Conductivity modulation

Differential on-resistance

Forward voltage drop

Implantation-free

Ultra-high-voltage

Diodes

Heterojunction bipolar transistors

Leakage currents

Modulation

Nitrogen compounds

Semiconductor junctions

Silicon carbide

Forward voltage drops

On-resistance

SiC PiN diodes

Ultra high voltage

Power semiconductor diodes

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