Device design for a raised extrinsic base SiGe bipolar technology

• The impact of emitter, inside spacer, and SIC lateral scaling on the AC and DC performance of a raised extrinsic base SiGe HBT has been investigated using the ISE TCAD simulation package and design of experiments methods. Strong first order effects for all three variables were observed while the interactions of the variables had a weaker effect. It was found that as the emitter size shrinks towards 0.1 mum the impact of changes to inside spacer and SIC width on the current gain increased. The response surface design led to an optimized simulated transistor featuring f(T) and f(MAX) values of 214 and 332 GHz, respectively.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

SiGe

HBT

SIC

TCAD Simulations

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