Electrical characterization of integrated 2-input TTL NAND Gate at elevated temperature, fabricated in bipolar SiC-technology

QC 20181101
This work presents the design and electrical characterization of in-house-fabricated 2-input NAND gate. The monolithic bipolar 2-input NAND gate employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC and operates over a wide range of temperature and supply voltage. The fabricated circuit was characterized on the wafer by using a hot-chuck probe-station from 25 °C up to 500 °C. The circuit is also characterized over a wide range of voltage supply i.e. 11 to 20 V. The output-noise margin high (NMH) and output-noise margin low (NML) are also measured over a wide range of temperatures and supply voltages using voltage transfer characteristics (VTC). The transient response was measured by applying two square waves of, 5 kHz and 10 kHz. It is demonstrated that the dynamic parameters of the circuit are temperature dependent. The 2-input TTL NAND gate consumes 20 mW at 500 °C and 15 V.

Elahipanah, HosseinKTH(Swepub:kth)u1ve1t1u (författare)
Hedayati, RahelehKTH(Swepub:kth)u1g0k69x (författare)
Zetterling, Carl-Mikael,1966-KTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns (författare)
KTHIntegrerade komponenter och kretsar (creator_code:org_t)

Ingår i:International Conference on Silicon Carbide and Related Materials, ICSCRM 2017: Trans Tech Publications Inc., s. 958-9619783035711455

Av författaren/redakt...: Shakir, Muhammad; Elahipanah, Hoss ...; Hedayati, Rahele ...; Zetterling, Carl ...

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