Boron-enhanced diffusion in excimer laser annealed Si

• The effect of excimer laser annealing (ELA) and rapid thermal annealing (RTA) on B redistribution in B-implanted Si has been studied by secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). B has been implanted with an energy of 1 keV and a dose of 10(16) cm(-2) forming a distribution with a width of 20-30nm and a peak concentration of similar to5 x 10(21) cm(-3). It has been found that ELA with 10 pulses of the energy density of 850 mJ/cm(2) results in a uniform B distribution over the ELA-molten region with an abrupt profile edge. SRP measurements demonstrate good activation of the implanted B after ELA, with the concentration of the activated fraction (similar to10(21) cm(-3)) exceeding the solid solubility level. RTA (30 s at 1100degreesC) of the as-implanted and ELA-treated samples leads to a diffusion of B with diffusivities exceeding the equilibrium one and the enhancement is similar for both of the samples. It is also found that RTA decreases the activated B in the ELA-treated sample to the solid solubility limit (2 x 10(20) cm(-3)). The similarity of the B diffusivity for the as-implanted and ELA-treated samples suggests that the enhancement of the B diffusivity is due to the so-called boron-enhanced diffusion (BED). Possible mechanisms of BED are discussed.

Nyckelord

boron-enhanced diffusion

excimer laser annealing

transient enhanced diffusion

ion-implantation

silicon

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