WFRF:(Jimenez J. M.)
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- Sun, Yan-TingKTH,Mikroelektronik och informationsteknik, IMIT (author)
Sulfur-doped indium phosphide on silicon substrate brown by ELOG
- Article/chapterEnglish2004
Publisher, publication year, extent ...
- The Electrochemical Society,2004
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-24025
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-24025URI
- https://doi.org/10.1149/1.1804981DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- QC 20111031
- The epitaxial lateral overgrowth (ELOG) of sulfur-doped InP on masked InP/Si substrate in a low-pressure hydride vapor phase epitaxy system was investigated. Octahedral shaped ELOG InP templates with smooth surface were formed and studied by cathodoluminescence (CL). High-energy transition at 825 nm due to the band-filling effect was observed in spectra at 80 K. The band edge transition at 875 nm has no red shift caused by thermal strain. As observed in panchromatic image, defect free area was surrounded by high density threading dislocations pinned by sulfur atoms due to impurity hardening.
Subject headings and genre
- NATURVETENSKAP Kemi Materialkemi hsv//swe
- NATURAL SCIENCES Chemical Sciences Materials Chemistry hsv//eng
- vapor-phase epitaxy
- inp
- overgrowth
- crystals
- gaas
Added entries (persons, corporate bodies, meetings, titles ...)
- Lourdudoss, SebastianKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u16044fg (author)
- Avella, M. (author)
- Jimenez, J. (author)
- KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)
Related titles
- In:Electrochemical and solid-state letters: The Electrochemical Society7:11, s. G269-G2711099-00621944-8775
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