Growth, Electrical and Optical Properties of SnO2:F on ZnO, Si and Porous Si Structures

• In this work we have analyzed the optical absorption of the ZnO and SnO2:F (FTO) films and applied them in porous silicon light-emitting diodes. The absorption and energy gap were calculated by employing the projector augmented wave method [1] within the local density approximation and with a modeled on-site self-interaction-like correction potential within the LDA+U-S/C [2]. Experiment and theory show a good agreement when the optical absorption and optical energy gap are considered. A layer of FTO is deposited by spray pyrolysis on top of porous Si (PSi) or ZnO/(PSi) in order to make the LEDs. The morphology and roughness of the films are analyzed by Atomic Force Microscopy before and after the FTO deposition. The electrical and optical properties are studied by characteristics curves J x V, and electroluminescence intensity versus bias.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

Absorption

Atomic force microscopy

Electric properties

Energy gap

Light

Light absorption

Light emission

Light emitting diodes

MEMS

Microelectromechanical devices

Nanotechnology

Porous silicon

Semiconducting silicon compounds

Semiconducting zinc compounds

Solids

Spray pyrolysis

Zinc oxide

TECHNOLOGY

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