Correlated development of a (2x2) reconstruction and acharge accumulation layer on the InAs(111)-Bi surface

• We have studied the formation of a Bi induced (2x2) reconstruction on the InAs(111)Bsurface. In connection to the development of the (2x2) reconstruction, a two dimensionalcharge accumulation layer located in the bottom of the InAs conduction band appears as seenthrough a photoemission structure at the Fermi level. Not well ordered Bi layers do not inducea charge accumulation. The Bi induced reconstruction reduces the polarisation of the pristinesurface and changes the initial charge distribution. InAsBi alloying occurs below the surfacewhere Bi act as charge donor leading to the charge accumulation layer.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Adatoms

Indium arsenide

Bismuth

Photoemission

2 DEG

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Adatoms

Indium arsenide

Bismuth

Photoemission

2 DEG

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)