High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

• This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 ºC. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 ºC. The βFmax drops to 51 at 400 ºC and remains the same at 500 ºC. The photo current gain of the phototransistor is 3.9 at 25 ºC and increases to 14 at 500 ºC under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4HSiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics onchip integration.

Nyckelord

4H-SiC

Phototransistor

Integrated Circuit (IC)

High Temperature

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