Electrically active defects in silicon produced by ion channeling

• Low-dose implantations with 65 Si and 150 keV Ge ions into the n(+) top layer of Si n(+)p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transient spectroscopy. Results were compared to crystal-TRIM calculations and results from 2 MeV electron irradiations. Previously, ion channeling was disregarded in studies on point defect migration at room temperature using ion implantation in surface layers. In our studies, ion channeling is dominant and it overwhelms any contribution from point defect diffusion.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

room-temperature

point-defects

migration

si

traps

Electronics

Elektronik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)