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Strong inter-conduc...
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Canestraro, Carla DanieleKTH,Materialvetenskap
(författare)
Strong inter-conduction-band absorption in heavily fluorine doped tin oxide
- Artikel/kapitelEngelska2008
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Elsevier BV,2008
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LIBRIS-ID:oai:DiVA.org:kth-26005
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-26005URI
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https://doi.org/10.1016/j.apsusc.2008.06.113DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:art swepub-publicationtype
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QC 20101109 Uppdaterad från submitted till published 20101109.
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The optical, electrical and structural properties of thin. film tin oxide (TO), F-doped tin oxide (FTO; n(F) approximate to 6 x 10(20) cm (3)) and highly F-doped tin oxide (hFTO; n(F) approximate to 10 x 10(20) cm (3)), grown by spray pyrolysis technique, are studied by atomic force microscopy, Hall effect, X-ray. fluorescence and transmission/reflection measurements. The resistivity (rho = 32 x 10 (4) Omega cm for intrinsic tin oxide) shows intriguing characteristics when F concentration n(F) is increased (rho = 6 x 10 (4) Omega cm for FTO but 25 x 10 (4) Omega cm for hFTO) whereas the carrier concentration is almost constant at high F concentration (n(c) approximate to 6 x 10(20) cm (3) for FTO and hFTO). Thus, F seems to act both as a donor and a compensating acceptor in hFTO. The high carrier concentration has a strong effect on the optical band-edge absorption. Whereas intrinsic TO has room-temperature band-gap energy of E-g approximate to 3.2 eV with an onset to absorption at about 3.8 eV, the highly doped FTO and hFTO samples show relatively strong absorption at 2-3 eV. Theoretical analysis based on density functional calculations of FTO reveals that this is not a defect state within the band-gap region, but instead a consequence of a hybridization of the F donor states with the host conduction band in combination with a band. filling of the lowest conduction band by the free carriers. This allows photon-assisted inter-conduction band transitions of the free electrons to energetically higher and empty conduction bands, producing the below-gap absorption peak.
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Oliveira, Marcela M.Departamento de Química, Universidade Federal do Paraná
(författare)
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Valaski, RogerioDepartamento de Física, Universidade Federal do Paraná
(författare)
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da Silva, Marcus V. S.Instituto de Física, Universidade Federal da Bahia
(författare)
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David, Denis G. F.Instituto de Física, Universidade Federal da Bahia
(författare)
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Pepe, IuriInstituto de Física, Universidade Federal da Bahia
(författare)
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Ferreira da Silva, AntonioInstituto de Física, Universidade Federal da Bahia
(författare)
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Roman, Lucimara S.Departamento de Física, Universidade Federal do Paraná
(författare)
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Persson, ClasKTH,Materialvetenskap(Swepub:kth)u16hf74r
(författare)
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KTHMaterialvetenskap
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Applied Surface Science: Elsevier BV255:5, s. 1874-18790169-43321873-5584
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