Silicon carbide BJT oscillator design using S-parameters

• Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 °C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

4H-SiC BJT

RF oscillator

S-parameters

Bipolar transistors

Design

Extraction

Parameter extraction

Silicon carbide

Silicon wafers

Elevated temperature

High frequency simulation

High temperature

Oscillator design

Radio frequencies

SiC BJT

Wide temperature ranges

Scattering parameters

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)