Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states

• We report on photoluminescence (PL) studies of AlGaN/AlGaN multiple quantum well (MQW) structures with well widths spanning from 1.65 to 5.0 nm under various excitations and temperatures. The samples were fabricated by migration-enhanced metal-organic chemical vapor deposition technique (MEMOCVD (R)). Screening of the built-in electric field by photogenerated carriers reduced quantum-confined Stark effect (QCSE). This is confirmed by solving the Poisson and Schrodinger equations for AlGaN-based quantum wells (QWs) under study. Analysis of the PL internal quantum efficiency under different excitations in MQWs with different widths shows strong influence of the carrier localization on the radiative properties of MQWs.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

LIGHT-EMITTING-DIODES

AL(X)GA1-XN ALLOYS

DEPENDENCE

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Physics

Fysik

Publikations- och innehållstyp

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