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HiPIMS optimization...
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Brenning, NilsLinköpings universitet,KTH,Rymd- och plasmafysik,Univ Paris Saclay, Univ Paris Sud, UMR 8578 CNRS, Lab Phys Gaz & Plasmas LPGP, F-91405 Orsay, France.;Linköping Univ, Plasma & Coatings Phys Div, IFM Mat Phys, SE-58183 Linköping, Sweden.,Plasma och ytbeläggningsfysik,Tekniska fakulteten,Univ Paris Saclay, France; KTH Royal Inst Technol, Sweden
(author)
HiPIMS optimization by using mixed high-power and low-power pulsing
- Article/chapterEnglish2021
Publisher, publication year, extent ...
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2021-01-29
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IOP Publishing,2021
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-291077
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-291077URI
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https://doi.org/10.1088/1361-6595/abd79aDOI
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-173630URI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20210301
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Funding Agencies|Icelandic Research Fund [196141]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Free State of Saxony; European Regional Development FundEuropean Commission [100336119]; Svensk-Franska Stiftelsen
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The possibility to optimize a high-power impulse magnetron sputtering (HiPIMS) discharge through mixing two different power levels in the pulse pattern is investigated. Standard HiPIMS pulses are used to create the ions of the film-forming material. After each HiPIMS pulse an off-time follows, during which no voltage (or, optionally, a reversed voltage) is applied, letting the remaining ions in the magnetic trap escape towards the substrate. After these off-times, a long second pulse with lower amplitude, in the dc magnetron sputtering range, is applied. During this pulse, which is continued up to the following HiPIMS pulse, mainly neutrals of the film-forming material are produced. This pulse pattern makes it possible to achieve separate optimization of the ion production, and of the neutral atom production, that constitute the film-forming flux to the substrate. The optimization process is thereby separated into two sub-problems. The first sub-problem concerns minimizing the energy cost for ion production, and the second sub-problem deals with how to best split a given allowed discharge power between ion production and neutral production. The optimum power split is decided by the lowest ionized flux fraction that gives the desired film properties for a specific application. For the first sub-problem we describe a method where optimization is achieved by the selection of five process parameters: the HiPIMS pulse amplitude, the HiPIMS pulse length, the off-time, the working gas pressure, and the magnetic field strength. For the second sub-problem, the splitting of power between ion and neutral production, optimization is achieved by the selection of the values of two remaining process parameters, the HiPIMS pulse repetition frequency and the discharge voltage of the low-power pulse.
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Hajihoseini, HamidrezaUniv Iceland, Inst Sci, Dunhaga 3, IS-107 Reykjavik, Iceland.
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Rudolph, MartinLeibniz Inst Surface Engn IOM, Permoserstr 15, D-04318 Leipzig, Germany.
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Raadu, Michael A.KTH,Rymd- och plasmafysik,KTH Royal Inst Technol, Sweden(Swepub:kth)u1ajzw7w
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Gudmundsson, Jon Tomas,1965-KTH,Rymd- och plasmafysik,Univ Iceland, Inst Sci, Dunhaga 3, IS-107 Reykjavik, Iceland.,KTH Royal Inst Technol, Sweden; Univ Iceland, Iceland(Swepub:kth)u1q27a34
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Minea, Tiberiu M.Univ Paris Saclay, Univ Paris Sud, UMR 8578 CNRS, Lab Phys Gaz & Plasmas LPGP, F-91405 Orsay, France.
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Lundin, DanielLinköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten(Swepub:liu)danlu03
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KTHRymd- och plasmafysik
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In:Plasma sources science & technology: IOP Publishing30:10963-02521361-6595
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