Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching Applications

• Heteroepitaxial growth of orientation-patterned GaP on patterned GaAs template was developed by using hydride vapor phase epitaxy for quasi-phase-matching applications. We present the growth with well-defined periodic boundaries between (001) and (00 1) GaP domains. The GaP layer on planar GaAs was characterized by terahertz time-domain spectroscopy and the conductivity of GaP (0.16 S cm-1) was obtained in terahertz range. 

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Hydride vapour phase epitaxy

Orientation patterned GaP on GaAs

Terahertz time-domain spectroscopy

Gallium arsenide

Gallium phosphide

Hydrides

Phase matching

Plasmons

Reflectometers

Semiconducting gallium

Spectrophotometers

Terahertz spectroscopy

Vapor phase epitaxy

GaAs

Hydride vapor phase epitaxy

Hydride vapour phase epitaxies

Periodic boundaries

Quasi phase matching

Terahertz range

Terahertz time domain spectroscopy

III-V semiconductors

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