Assessment of High and Low Temperature Performance of SiC BJTs

• This paper addresses the performance of SiC NPN Bipolar Junction Transistors (BJTs) at high and low temperature. A current gain of 50 at room temperature was obtained which decreases to 25 at 275 degrees C. A maximum current gain (beta) of 111 has been reported at -86 degrees C. At low temperature (below -86 degrees C), the current gain drops rapidly because of carrier freezout effect. At room temperature, a minimum on-resistance of 7 m Omega-cm(2) was obtained. This increases to 28 m Omega-cm(2) at 275 degrees C. The on-resistance of BJTs is approximately unaffected by lowering the temperature down to -86 degrees C front room temperature. Below -86 degrees C, the on-reststance JUMPS up rapidly because of carrier freezeout. Electrical performance of BJTs have been fairly stable during stress measurement at high temperature (120 hours at 100 degrees C) at a collector bias of 1000V (with open base) for devices with a breakdown voltage of 1200VA. The devices have been stressed further at low (i.e., 6) and high gain (i.e., 15) at room temperature. Initial degradation within first hour of stress test has been reported and then degradation stabilizes out. Packaged devices were tested Lip to 550 degrees C and performed admirably well up to that temperature.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

SiC

SiC BJTs

bipolar junction transistors

bipolar devices

characterization

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)