Implantation-Free Low on-resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

• In this study, high voltage blocking (2.7 kV) implantation-free SiC Bipolar Junction Transistors with low on-state resistance (12 m Omega-cm(2)) and high common-emitter current gain of 50 have been fabricated. A graded base doping was implemented to provide a low resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high temperature dopant activation annealing and for avoiding generation of life-time killing defects that reduces the current gain. Also in this process large area transistors showed common-emitter current gain of 38 and open-base breakdown voltage of 2 kV.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Bipolar Junction Transistors (BJTs)

power transistors

silicon carbide

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)