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Simulations of Open...
Simulations of Open Emitter Breakdown Voltage in SiC BJTs with non Implanted JTE
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- Buono, Benedetto (författare)
- KTH,Integrerade komponenter och kretsar
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- Lee, Hyung-Seok (författare)
- KTH,Integrerade komponenter och kretsar
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- Domeij, Martin (författare)
- KTH,Integrerade komponenter och kretsar
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visa fler...
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- Zetterling, Carl -Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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visa färre...
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(creator_code:org_t)
- Trans Tech Publications Inc. 2009
- 2009
- Engelska.
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 615-617, s. 841-844
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- Ion implantation for selective doping of SiC is problematic due to damage generation during the process and low activation of dopants. In SiC bipolar junction transistor (BJT) the junction termination extension (JTE) can be formed without ion implantation using instead a controlled etching into the epitaxial base. This etched JTE is advantageous because it eliminates ion implantation induced damage and the need for high temperature annealing. However, the dose, which is controlled by the etched base thickness and doping concentration, plays a crucial role. In order to find the optimum parameters, device simulations of different etched base thicknesses have been performed using the software Sentaurus Device. A surface passivation layer consisting of silicon dioxide, considering interface traps and fixed trapped charge, has been included in the analysis by simulations. Moreover a comparison with measured data for fabricated SiC BJTs has been performed.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- silicon carbide
- simulation
- etched JTE
- breakdown voltage
- fixed charge
- interface traps
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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