Studies on Schottky Barrier Diodes Fabricated using Single-Crystal Wafers of β-Ga2O3 Grown by the Optical Floating Zone Technique

• β-Ga2O3 is one of the most promising wide-bandgap materials for optoelectronic applications as well as a conducting substrate for GaN-based device technologies. Single crystals of undoped β-Ga2O3 are grown by the optical floating zone technique utilizing compressed dry air as growth atmosphere. The properties of β-Ga2O3 are highly anisotropic. Optimization of the processing recipe for wafers along different orientations suitable for device development is conducted. Structural, optical, and electrical properties of the wafers are determined. Efforts are made to fabricate Schottky diodes based on Pt/Ti/Au–β-Ga2O3–Ti/Au device structures. Devices are fabricated on (−201) cut wafers. The device characteristics are discussed in detail.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

electrical properties

optical floating zone technique

Schottky diodes

structural properties

β-Ga2O3 single crystals

Diodes

Fabrication

Gallium nitride

III-V semiconductors

Optical properties

Schottky barrier diodes

Wide band gap semiconductors

Conducting substrates

Floating zone technique

GaN-based devices

Optical floating zones

Optoelectronic applications

Single crystal wafers

Wide band-gap material

Β-ga2O3 single crystal

Single crystals

Publication and Content Type

ref (subject category)

art (subject category)