WFRF:(Lourdudoss Sebastian 1953 )
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- Dhanabalan, D. (author)
Studies on Schottky Barrier Diodes Fabricated using Single-Crystal Wafers of β-Ga2O3 Grown by the Optical Floating Zone Technique
- Article/chapterEnglish2022
Publisher, publication year, extent ...
- 2021-10-13
- Wiley,2022
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-312303
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-312303URI
- https://doi.org/10.1002/pssb.202100496DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- QC 20220530
- β-Ga2O3 is one of the most promising wide-bandgap materials for optoelectronic applications as well as a conducting substrate for GaN-based device technologies. Single crystals of undoped β-Ga2O3 are grown by the optical floating zone technique utilizing compressed dry air as growth atmosphere. The properties of β-Ga2O3 are highly anisotropic. Optimization of the processing recipe for wafers along different orientations suitable for device development is conducted. Structural, optical, and electrical properties of the wafers are determined. Efforts are made to fabricate Schottky diodes based on Pt/Ti/Au–β-Ga2O3–Ti/Au device structures. Devices are fabricated on (−201) cut wafers. The device characteristics are discussed in detail.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- electrical properties
- optical floating zone technique
- Schottky diodes
- structural properties
- β-Ga2O3 single crystals
- Diodes
- Fabrication
- Gallium nitride
- III-V semiconductors
- Optical properties
- Schottky barrier diodes
- Wide band gap semiconductors
- Conducting substrates
- Floating zone technique
- GaN-based devices
- Optical floating zones
- Optoelectronic applications
- Single crystal wafers
- Wide band-gap material
- Β-ga2O3 single crystal
- Single crystals
Added entries (persons, corporate bodies, meetings, titles ...)
- Ananthu, V. (author)
- Akshita, K. V. (author)
- Bhattacharya, S. (author)
- Varadarajan, E. (author)
- Ganesamoorthy, S. (author)
- Moorthy Babu, S. (author)
- Natarajan, V. (author)
- Verma, S. (author)
- Srivatsava, M. (author)
- Lourdudoss, Sebastian,1953-KTH,Fotonik(Swepub:kth)u16044fg (author)
- KTHFotonik (creator_code:org_t)
Related titles
- In:Physica status solidi. B, Basic research: Wiley259:20370-19721521-3951
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