(WFRF:(Zhang Wei)) srt2:(2005-2009)
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- Liao, Zhong-Wei (author)
Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier
- Article/chapterEnglish2009
Publisher, publication year, extent ...
- 2009
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-32342
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-32342URI
- https://doi.org/10.1088/0256-307X/26/8/087303DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- QC 20110413
- An atomic-layer-deposited Al2O3/HfO2/Al2O3 (A/H/A) tunnel barrier is investigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i. e., an increase by 9V for +/- 12V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1V for 100 mu s program/erase at a low voltage of +/- 7V, which is due to fast charge injection rates, i. e., about 2.4 x 10(16) cm(-2) s(-1) for electrons and 1.9 x 10(16) cm(-2) s(-1) for holes.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- NONVOLATILE MEMORY
- RETENTION
- Electrical engineering, electronics and photonics
- Elektroteknik, elektronik och fotonik
Added entries (persons, corporate bodies, meetings, titles ...)
- Gou, Hong-Yan (author)
- Huang, Yue (author)
- Sun, Qing-Qing (author)
- Ding, Shi-Jin (author)
- Zhang, Wei (author)
- Zhang, Shi-LiKTH,Integrerade komponenter och kretsar(Swepub:kth)u1a28qyq (author)
- KTHIntegrerade komponenter och kretsar (creator_code:org_t)
Related titles
- In:Chinese Physics Letters26:8, s. 087303-0256-307X1741-3540
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