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Comparative study o...
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Esteve, RomainKTH,Integrerade komponenter och kretsar
(author)
Comparative study of thermal oxides and post-oxidized depositedoxides on n-type free standing 3C-SiC
- Article/chapterEnglish2010
Publisher, publication year, extent ...
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-32466
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-32466URI
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https://doi.org/10.4028/www.scientific.net/MSF.645-648.829DOI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20110414
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The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidationand an advanced oxidation process combining SiO 2 deposition with rapid post oxidation steps havebeen compared. Two alternative SiO 2 deposition techniques have been studied: the plasmaenhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition(LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms ofinterface traps density and reliability.
Subject headings and genre
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3C-SiC
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MOS capacitors
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oxide deposition
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post-oxidation
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interface traps
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TZDB.
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TECHNOLOGY
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TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Schöner, A.
(author)
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Reshanov, S.A.
(author)
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Zetterling, Carl-MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns
(author)
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KTHIntegrerade komponenter och kretsar
(creator_code:org_t)
Related titles
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In:Materials Science Forum645-648, s. 829-8320255-54761662-9752
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