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  • Esteve, RomainKTH,Integrerade komponenter och kretsar (author)

Comparative study of thermal oxides and post-oxidized depositedoxides on n-type free standing 3C-SiC

  • Article/chapterEnglish2010

Publisher, publication year, extent ...

  • 2010
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-32466
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-32466URI
  • https://doi.org/10.4028/www.scientific.net/MSF.645-648.829DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20110414
  • The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidationand an advanced oxidation process combining SiO 2 deposition with rapid post oxidation steps havebeen compared. Two alternative SiO 2 deposition techniques have been studied: the plasmaenhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition(LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms ofinterface traps density and reliability.

Subject headings and genre

  • 3C-SiC
  • MOS capacitors
  • oxide deposition
  • post-oxidation
  • interface traps
  • TZDB.
  • TECHNOLOGY
  • TEKNIKVETENSKAP

Added entries (persons, corporate bodies, meetings, titles ...)

  • Schöner, A. (author)
  • Reshanov, S.A. (author)
  • Zetterling, Carl-MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns (author)
  • KTHIntegrerade komponenter och kretsar (creator_code:org_t)

Related titles

  • In:Materials Science Forum645-648, s. 829-8320255-54761662-9752

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