Enhanced Stochastic Bit Rate for Perpendicular Magnetic Tunneling Junctions in a Transverse Field

• Perpendicular magnetic tunneling junctions(pMTJs) as true random number generators (TRNGs) have been investigated by means of high-temperature micromagnetic simulations using MuMax3. An in-plane applied field, which lowers the energy barrier for thermally activated reversal, can be used to control and increase the bitrates. We study the attempt rate and the energy barrier for 10 and 40 nm diameter devices in various applied magnetic fields. At room temperature, the presence of the field leads to orders of magnitude increase in the bitrate, up to ∼ 100 MHz.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

MTJ

TRNG

stochastic magnetization dynamics

micromagnetic modeling

Informations- och kommunikationsteknik

Information and Communication Technology

Material and Nano Physics

Material- och nanofysik

Publication and Content Type

vet (subject category)

ovr (subject category)