Enhanced Stochastic Bit Rate for Perpendicular Magnetic Tunneling Junctions in a Transverse Field

QC 20230920
Perpendicular magnetic tunneling junctions(pMTJs) as true random number generators (TRNGs) have been investigated by means of high-temperature micromagnetic simulations using MuMax3. An in-plane applied field, which lowers the energy barrier for thermally activated reversal, can be used to control and increase the bitrates. We study the attempt rate and the energy barrier for 10 and 40 nm diameter devices in various applied magnetic fields. At room temperature, the presence of the field leads to orders of magnitude increase in the bitrate, up to ∼ 100 MHz.

Chaves-O'Flynn, Gabriel D.nstitute of Molecular Physics, Polish Academy of Sciences, Poznan, Poland (författare)
Kent, Andrew D.Center for Quantum Phenomena, Department of Physics, New York University, New York, NY 10003, USA (författare)
Malm, B. Gunnar,1972-KTH,Elektroteknik(Swepub:kth)u13lag9j (författare)
KTHElektronik och inbyggda system (creator_code:org_t)

Av författaren/redakt...: Capriata, Corrad ...; Chaves-O'Flynn, ...; Kent, Andrew D.; Malm, B. Gunnar, ...

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