Integrating InP MMICs and Silicon Micromachined Waveguides for Sub-THz Systems

• A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220 GHz to 330 GHz in a back-to-back configuration. Measured insertion loss is 3 dB to 6 dB at 250 GHz to 300 GHz , and return loss is in excess of 5 dB.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

InP

MMIC

silicon micromachining

submillimeter wave

terahertz

transition

waveguide

Silicon

Waveguide transitions

Waveguide components

Indium phosphide

III-V semiconductor materials

Coplanar waveguides

Publication and Content Type

ref (subject category)

art (subject category)