Modeling and Characterization of the ON-Resistance in 4H-SiC Power BJTs

QC 20110711
The ON-resistance of silicon carbide bipolar transistors is characterized and simulated. Output characteristics are compared at different base currents and different temperatures in order to validate the physical model parameters. A good agreement is obtained, and the key factors, which limit the improvement of R-ON, are identified. Surface recombination and material quality play an important role in improving device performances, but the device design is also crucial. Based on simulation results, a design that can enhance the conductivity modulation in the lowly doped drift region is proposed. By increasing the base doping in the extrinsic region, it is possible to meet the requirements of having low voltage drop, high current density, and satisfactory forced current gain. According to simulation results, if the doping is 5 x 10(18) cm(-3), it is possible to conduct 200 A/cm(2) at V-CE = 1 V by having a forced current gain of about 8, which represents a large improvement, compared with the simulated value of only one in the standard design.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
Bipolar junction transistor (BJT)
extrinsic base
forced current gain
ON-resistance
4H-silicon carbide (SiC)
Electrical engineering, electronics and photonics
Elektroteknik, elektronik och fotonik

Ghandi, RezaKTH,Integrerade komponenter och kretsar(Swepub:kth)u18ctjp5 (författare)
Domeij, MartinKTH,Integrerade komponenter och kretsar(Swepub:kth)u13cuycd (författare)
Malm, Bengt GunnarKTH,Integrerade komponenter och kretsar(Swepub:kth)u13lag9j (författare)
Zetterling, Carl-MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns (författare)
Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4 (författare)
KTHIntegrerade komponenter och kretsar (creator_code:org_t)

Ingår i:IEEE Transactions on Electron Devices58:7, s. 2081-20870018-93831557-9646

Av författaren/redakt...: Buono, Benedetto; Ghandi, Reza; Domeij, Martin; Malm, Bengt Gunn ...; Zetterling, Carl ...; Östling, Mikael

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