Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped In(2)O(3)

• Indium oxide is chosen as the host material for doping Ti, V, and Cr transition metal ions. Theoretical calculations based on density functional theory within a local spin density approximation show that V-V separation of 5.6 A is more stable with a strong ferromagnetic coupling. Our calculations clearly predict that substitution of vanadium for indium should yield ferromagnetism in In(2)O(3). Experimentally, (In(0.95)TM(0.05))O(3) (TM=Ti,V,Cr) were prepared using sol-gel as well as solid state reaction methods. Superconducting quantum interference device magnetization measurements as a function of field and temperature clearly showed that the V and Cr doped samples are ferromagnetic with Curie temperature well above room temperature. Thin films deposited by pulsed laser ablation using these materials on sapphire substrates exhibit a preferred 222 orientation normal to the plane of the film. The magnetic moment for (In(0.95)V(0.05))O(3) film deposited in 0.1 mbar oxygen pressure was estimated to be 1.7 mu(B)/V and is comparable to the theoretical value of 2 mu(B)/V.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

semiconductors

bulk

Publication and Content Type

ref (subject category)

art (subject category)