Influence of dislocations on low frequency noise in nMOSFETs fabricated on tensile strained virtual substrates

• In this work sSi nMOSFETs with 13 run sSi thickness on 27% Ge virtual substrates (VS) are investigated and an increased LF noise level with a characteristic gate bias dependence is found. High off-state leakage of the MOSFETs indicates the presence of misfit dislocations in the channel region. A channel conductance based model is proposed to analyse the noise originating from a highly localized defect in the channel.

Subject headings

NATURVETENSKAP  -- Data- och informationsvetenskap (hsv//swe)

NATURAL SCIENCES  -- Computer and Information Sciences (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

1/f noise

low-frequency noise

strained silicon

virtual substrate

dislocation

Publication and Content Type

ref (subject category)

kon (subject category)