A Si/SiGe MOSFET utilizing low-temperature wafer bonding

• A process scheme for the fabrication of a low temperature SiGe V-groove MOSFET is demonstrated. The transfer and output characteristics show promising results for the device performance. The source/drain resistance and the quality of the gate insulator/SiGe channel must be optimized for device operation improvement.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

wafer bonding

SiGe MOSFET

GIDL effect

Publication and Content Type

ref (subject category)

art (subject category)