High energy resolution detectors based on 4H-SiC

• The spectrometric characteristics of the detectors based on 4H-SiC using 4.8-7.7 MeV a-particles were determined. The Cr Schottky barriers with areas of 1x10(-2) cm(2) were performed by vacuum thermal evaporation on 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) with thickness 26 and 50 μ m. The concentrations of the uncompensated donors into CVD epitaxial layers were (6-10) x10(14) cm(-3), that allowed to develop a detector depletion region up to 30 μ m using reverse bias of 400 V. The energy resolution less than 20 keV (0.34%) for lines of 5.0-5.5 MeV was achieved that is twice as large of the resolution of high-precision Si-based detectors prepared on specialized technology. The maximum signal amplitude of 4H-SiC - detectors corresponding to the average electron-hole pair generation energy was found to be 7.70 eV.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

SiC

detector

irradiation

alpha-particles

isotopes

charge collection

energy resolution

Publication and Content Type

ref (subject category)

kon (subject category)