Strong enhancement of Rashba effect in strained p-type quantum wells

• One of the most studied spintronic devices is the spin transistor proposed by Datta and Das. The mechanism behind this transistor is the Rashba effect: The inversion asymmetry caused by the gate voltage gives rise to a spin splitting. We show that the relevant spin splitting in k-space is typically two orders of magnitude larger in unstrained p-type quantum wells compared to n-type quantum wells. We also show that further order-of-magnitude improvement can be obtained by utilizing the frequently ignored lattice-mismatch between GaAs and AlGaAs.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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