Search: (WFRF:(Kazantsev A. V.)) srt2:(2004) >
Determination of ni...
Determination of nitrogen in silicon carbide by secondary ion mass spectrometry
- Article/chapterEnglish2004
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Numbers
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LIBRIS-ID:oai:DiVA.org:kth-45387
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-45387URI
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https://doi.org/10.1023/B:JANC.0000018968.09670.88DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20111031
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The emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. It is shown that, among all the secondary ions of the CxN and SixN kind (x = 0, 1, 2, 3), the (26)(CN)(-) fragment exhibits the highest ion yield. The use of an ion peak with a specified mass as an analytical signal provides a detection limit for nitrogen in SiC at a level of 10(16) cm(-3). This result is attained in measurements at high mass resolution (M/DeltaM = 7500, interference peak (26)(C-13(2))(-)).
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Kazantsev, D. Y.
(author)
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Kalinina, E. V.
(author)
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Kovarskii, A. P.
(author)
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Kossov, V. G.
(author)
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Hallén, AndersKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u11ywmz1
(author)
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Yafaev, R. R.
(author)
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KTHMikroelektronik och informationsteknik, IMIT
(creator_code:org_t)
Related titles
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In:Journal of Analytical Chemistry59:3, s. 250-2541061-93481608-3199
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