Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect

QC 20111108
The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. The lowest two subbands of the two-dimensional electron gas in the heterointerface were populated. After the low temperature illumination, the electron density increases from 11.99x10(12) cm(-2) to 13.40x10(12) cm(-2) for the first subband and from 0.66x10(12) cm(-2) to 0.94x10(12) cm(-2) for the second subband. The persistent photoconductivity effect (similar to 13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first subband is filled at a density of 9.40x10(12) cm(-2). We obtained the energy separation between the first and second subbands to be 105 meV.

Tsai, J. K. (author)
Gau, M. H. (author)
Chen, Y. L. (author)
Chang, Z. J. (author)
Wang, W. T. (author)
Chiang, J. C. (author)
Wang, K. R. (author)
Chen, C-N (author)
Aggerstam, ThomasKTH,Electrumlaboratoriet, ELAB(Swepub:kth)u1p9u0ta (author)
Lourdudoss, SebastianKTH,Electrumlaboratoriet, ELAB(Swepub:kth)u16044fg (author)
KTHElectrumlaboratoriet, ELAB (creator_code:org_t)

In:Physical Review B. Condensed Matter and Materials Physics74:24, s. 245325-1098-01211550-235X

By the author/editor: Lo, Ikai; Tsai, J. K.; Gau, M. H.; Chen, Y. L.; Chang, Z. J.; Wang, W. T.; show more...; Chiang, J. C.; Wang, K. R.; Chen, C-N; Aggerstam, Thoma ...; Lourdudoss, Seba ...; show less...

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