Wafer-level integration of NiTi shape memory alloy wires for the fabrication of microactuators using standard wire bonding technology

• This paper reports on the first integration of SMA wires into silicon based MEMS structures using a standard wire bonder. This approach allows fast and efficient placement, alignment and mechanical attachment of NiTi-based SMA wires to silicon-based MEMS. The wires are mechanically anchored and clamped into deep-etched silicon structures on a wafer. The placement precision is high with an average deviation of 4 #x03BC;m and the mechanical clamping is strong, allowing successful actuation of the SMA wires.

Keyword

MEMS structures;NiTi;SMA wires;deep-etched silicon structures;mechanical clamping;microactuator fabrication;shape memory alloy wire;size 4 mum;standard wire bonding technology;wafer-level integration;etching;lead bonding;microactuators;nickel compounds;wafer level packaging

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