Growth of stoichiometric subnanometer silica films

• We present a method to grow stoichiometric SiO(2) films of only similar to 0.6-0.9 nm in thickness on a metal substrate. Based on photoelectron and infrared spectroscopy studies, we conclude that the similar to 0.6-nm-thick silica films exhibit characteristics only observed for > 2.0-nm-thick films grown on conventional Si substrates. The films can be used as model oxides for fundamental studies and may have implications on the further miniaturization of metal-oxide-semiconductor transistors.

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NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

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