Formation of ordered pore arrays at the nanoscale by electrochemical etching of n-type silicon

• Electrochemical etching has been studied to structure n-type silicon substrates at the nanoscale. In this work, well-ordered pore arrays with diameters in the range of 150-500 nm and depths up to 50 mum have been fabricated. The pores were successfully formed by anodic etching in (100)oriented n-type silicon wafers of low-resistivity, typically 1 Omegacm, using aqueous hydrofluoric acid solutions. The lithographic step was performed in a thermally grown oxide using a stepper and dry oxide etching technique. Two types of oxide openings and pitch sizes were tested. The smallest oxide opening realised at this stage was 0.5 mum for a pitch of 1 mum. Stable pore formation was obtained and the smallest pore size obtained was about 200 nm with an aspect ratio close to 100.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Electrolytic polishing

Etching

Hydrofluoric acid

Lithography

Pore size

Silicon wafers

Dry oxide etching

Electrochemical etching (ECE)

Pore arrays

Space charge region (SCR)

Silicon

Electrophysics

Elektrofysik

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