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Interface defects i...
Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon
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Hurley, P. K. (författare)
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Cherkaoui, K. (författare)
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O'Connor, E. (författare)
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- Lemme, Max C., 1970- (författare)
- AMO GmbH, AMICA, Aachen, Germany
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Gottlob, H. D. B. (författare)
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Schmidt, M. (författare)
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Hall, S. (författare)
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Lu, Y. (författare)
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Buiu, O. (författare)
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Raeissi, B. (författare)
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Piscator, J. (författare)
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Engstrom, O. (författare)
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Newcomb, S. B. (författare)
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(creator_code:org_t)
- The Electrochemical Society, 2008
- 2008
- Engelska.
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 155:2, s. G13-G20
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- In this work, we present experimental results examining the energy distribution of the relatively high (> 1 X 10(11) cm(-2)) electrically active interface defects which are commonly observed in high-dielectric-constant (high-k) metal-insulator-silicon systems during high-k process development. This paper extends previous studies on the Si(100)/SiOx/HfO2 system to include a comparative analysis of the density and energy distribution of interface defects for HfO2, lanthanum silicate (LaSiOx), and Gd2O3 thin films on (100) orientation silicon formed by a range of deposition techniques. The analysis of the interface defect density across the energy gap, for samples which experience no H-2/N-2 annealing following the gate stack formation, reveals a peak density (similar to 2 X 10(12) cm(-2) eV(-1) to similar to 1 X 10(13) cm(-2) eV(-1)) at 0.83-0.92 eV above the silicon valence bandedge for the HfO2, LaSiOx, and Gd2O3 thin films on Si (100). The characteristic peak in the interface state density (0.83-0.92 eV) is obtained for samples where no interface silicon oxide layer is observed from transmission electron microscopy. Analysis suggests silicon dangling bond (P-bo) centers as the common origin for the dominant interface defects for the various Si(100)/SiOx/high-k/metal gate systems. The results of forming gas (H-2/N-2) annealing over the temperature range 350-555 degrees C are presented and indicate interface state density reduction, as expected for silicon dangling bond centers. The technological relevance of the results is discussed. (c) 2007 The Electrochemical Society.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
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Hurley, P. K.
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Cherkaoui, K.
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O'Connor, E.
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Lemme, Max C., 1 ...
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Gottlob, H. D. B ...
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Schmidt, M.
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visa fler...
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Hall, S.
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Lu, Y.
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Buiu, O.
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Raeissi, B.
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Piscator, J.
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Engstrom, O.
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Newcomb, S. B.
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visa färre...
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