Mobility in graphene double gate field effect transistors

• In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra-thin body silicon-on-insulator MOSFETs cannot compete with graphene FET values. (c) 2007 Elsevier Ltd. All rights reserved.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Nyckelord

graphene

field effect transistor

mobility

SOI

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