Nanoscale TiN metal gate technology for CMOS integration

• A TiN metal gate technology including essential natiostructuring process steps is investigated. Complex interdependencies of material deposition, nanolithography, nanoscale etching and post fabrication annealing are taken into account. First, a reactive sputter process has been optimized for plasma damage and stoichiometry. Then, a two step etch process that yields both anisotropy and selectivity has been identified. Finally, MOS-capacitors with TiN/SiO2 gate stacks fabricated with this technology have been exposed to rapid thermal annealing steps. TiN/SiO2 interfaces are chemically stable up to 800 degrees C and yield excellent CV and IV characteristics.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Keyword

nanoelectronics

metal gate

RIE etching

nanostructuring

TiN

Publication and Content Type

ref (subject category)

art (subject category)