Stability of crystalline Gd(2)O(3) thin films on silicon during rapid thermal annealing

• We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd(2)O(3) layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack ( silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 degrees C anneal.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Nyckelord

ELECTRODES

MOSFETS

OXIDES

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