Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics

Abermann, S.Institute of Solid State Electronics, Vienna University of Technology (author)

QC 20120228
In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TIN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 degrees C or 950 degrees C show thermodynamic instability and related undesirable high leakage currents.

Efavi, J. (author)
Sjöblom, GustafUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)gusjo205 (author)
Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany(Swepub:kth)u1m2eozy (author)
Olsson, JörgenUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)jorgolss (author)
Bertagnolli, E.Institute of Solid State Electronics, Vienna University of Technology (author)
Institute of Solid State Electronics, Vienna University of TechnologyFasta tillståndets elektronik (creator_code:org_t)

In:Microelectronics and reliability: Elsevier BV47:4-5, s. 536-5390026-27141872-941X

By the author/editor: Abermann, S.; Efavi, J.; Sjöblom, Gustaf; Lemme, Max C., 1 ...; Olsson, Jörgen; Bertagnolli, E.

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