WFRF:(Osten H. J)
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- Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany (author)
Complementary metal oxide semiconductor integration of epitaxial Gd(2)O(3)
- Article/chapterEnglish2009
Publisher, publication year, extent ...
- American Vacuum Society,2009
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-50536
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-50536URI
- https://doi.org/10.1116/1.3054350DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- In this paper, epitaxial gadolinium oxide (Gd(2)O(3)) is reviewed as a potential high-K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor (CMOS) processes. The material shows promising intrinsic properties, meeting critical ITRS targets for leakage current densities even at subnanometer equivalent oxide thicknesses. These epitaxial oxides can be integrated into a CMOS platform by a "gentle" replacement gate process. While high temperature processing potentially degrades the material, a route toward thermally stable epitaxial Gd(2)O(3) gate dielectrics is explored by carefully controlling the annealing conditions.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Nanoteknik hsv//swe
- ENGINEERING AND TECHNOLOGY Nano-technology hsv//eng
Added entries (persons, corporate bodies, meetings, titles ...)
- Gottlob, H. D. B. (author)
- Echtermeyer, T. J. (author)
- Schmidt, M. (author)
- Kurz, H. (author)
- Endres, R. (author)
- Schwalke, U. (author)
- Czernohorkky, M. (author)
- Tetzlaff, D. (author)
- Osten, H. J. (author)
- AMO GmbH, AMICA, Aachen, Germany (creator_code:org_t)
Related titles
- In:Journal of Vacuum Science & Technology B: American Vacuum Society27:1, s. 258-2611071-10231520-8567
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