Fabrication of monolithic bidirectional switch devices

QC 20120306
The fabrication scheme of a novel MOS-based power device, a monolithic bidirectional switch (MBS), is presented. This concept allows the integration of a bidirectional switch with the advantages of low power consumption, small package size, and low fabrication costs. Furthermore, device simulations predict a performance benefit for power applications such as matrix converters. In an MBS, the field effect is used to control carrier concentrations in elevated structures made up of nearly intrinsic silicon. A CMOS-compatible nano-fabrication process for the MBS is proposed, employing local oxidation of silicon for self-aligned contact formation. First electrical results are presented. (C) 2004 Elsevier B.V. All rights reserved.

Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany(Swepub:kth)u1m2eozy (författare)
Chmielus, S (författare)
Sittig, R (författare)
Spangenberg, B (författare)
Kurz, H (författare)
AMO GmbH, AMICA, Aachen, Germany (creator_code:org_t)

Av författaren/redakt...: Baus, M; Lemme, Max C., 1 ...; Chmielus, S; Sittig, R; Spangenberg, B; Kurz, H

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