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In-situ resistivity...
In-situ resistivity measurements during growth of ultra-thin Cr_0.7Mo_0.3
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- Gylfason, Kristinn B., 1978- (författare)
- Lyfjathroun Biopharmaceuticals, Iceland
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Ingason, A. S. (författare)
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Agustsson, J. S. (författare)
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Olafsson, S. (författare)
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Johnsen, K. (författare)
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Gudmundsson, J. T. (författare)
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(creator_code:org_t)
- Elsevier, 2006
- 2006
- Engelska.
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 515:2, s. 583-586
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The growth of ultra-thin, lattice matched, Cr0.7Mo0.3 films on an MgO substrate, in a dc magnetron discharge, was investigated by in situ measurements in order to determine the minimum thickness of a continuous layer. The thickness dependence of the resistivity shows a coalescence thickness of less than two monolayers indicating layer by layer growth of the films. We compare the resistivity of the films to a combination of the Fuchs- Sondheimer and the Mayadas-Shatzkes models, assuming a thickness dependence of grain size. The model indicates that grain size increases with increasing growth temperature.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- in situ resistivity
- thin film
- magnetron sputtering
- lattice matching
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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